N-channel 30 V, 0.0038 Ohm, 26 A, SO-8 STripFET(TM) VI DeepGATE(TM) Power MOSFET

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.\n • RDS(on)* Qgindustry benchmark\n• Extremely low on-resistance RDS(on)\n• High avalanche ruggedness• Low gate drive power losses\n• Very low switching gate charge;

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N-channel 30 V, 0.0038 廓, 26 A, SO-8 STripFET??VI DeepGATE??Power MOSFET

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STMICROELECTRONICS

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SOIC-8

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SOP8

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SOP8

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