Super high dense cell design for low RDS(ON).

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Suface Mount Package.

文件：171.79 Kbytes 页数：7 Pages

SAMHOP

三合微科

Dual N-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：521.76 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N - CHANNEL 60V - 0.180ohm - 2A SO-8 STripFET POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：70.87 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

Dual N-channel 30V - 0.09ohm - 3A SO-8 STripFET TM Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：268.01 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 30V - 0.09ohm - 3A SO-8 STripFET??II MOSFET PLUS SCHOTTKY RECTIFIER

DESCRIPTION This product associates the latest low voltage STripFET™ in n-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

文件：133.12 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

DUAL P-CHANNEL 20V - 0.14ohm - 2A SO-8 2.7V-DRIVE STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：117.15 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

DUAL P-CHANNEL 80V - 0.21 Ohm - 2.3A SO-8

DESCRIPTION This application specific Power MOSFET is the second generation of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps

文件：224.38 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

P-CHANNEL 20V - 0.14 ohm - 2.5A SO-8 2.7V-DRIVE STripFET??II MOSFET PLUS SCHOTTKY DIODE

DESCRIPTION This product associates the latest low voltage StripFETœ in p-channel version to a low drop Schottky diode. Such configuration is extremely versatile in implementing, a large variety of DC-DC converters for printers, portable equipment, and cellular phones.

文件：293.14 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 100V - 0.23 ohm - 6A SO-8 STripFET??II POWER MOSFET

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Co

文件：284.66 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-Channel 100 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 100 % UIS Tested APPLICATIONS • High Frequency Boost Converter • LED Backlight for LCD TV

文件：469.5 Kbytes 页数：9 Pages

VBSEMI

微碧半导体