isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 98A@ TC=25℃ ·Drain Source Voltage -VDSS= 68V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 9.8mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.78 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 68 V, 0.0082 廓, 98 A, TO-220 STripFET??II Power MOSFET

Description The STP80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications. Features ■ Excep

文件：429.59 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 75V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 10mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.49 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/I2PAK STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

文件：368.88 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件：999.1 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

功率MOSFET，N沟道（>40V至150V）

The STP80NF70 is a N-channel Power MOSFET realized with STMicroelectronics unique STripFET™ process. It has specifically been designed to minimize input capacitance and gate charge. The device is therefore suitable in advanced high-efficiency switching applications. • Exceptional dv/dt capability \n• 100% avalanche tested;

ST

意法半导体