isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 80A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8.0mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-CHANNEL 55V - 0.0060 ohm - 80A D2PAK/TO-220 STripFET??II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique single feature size strip-based process. The resulting transistorshows extremely high packing density for low on-resistance, rugged avalanche characteristics andless critical alignment steps therefore a remarkable

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STMICROELECTRONICS

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N-channel 55 V, 0.0060 廓, 80 A, TO-220, D2PAK STripFET??II Power MOSFET

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STMICROELECTRONICS

意法半导体

N-Channel 55 V, 0.006 Ohm typ., 80 A StripFET(TM) II Power MOSFET in TO-220 package

This Power MOSFET is the latest development of STMicroelectronis unique \\\"single feature size\\\" strip-based process. The resulting transistorshows extremely high packing density for low on-resistance, rugged avalanche characteristics andless critical alignment steps therefore a remarkable manufa Low threshold drive;

ST

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