N-Channel 30-V (D-S) MOSFET

文件：984.57 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N - CHANNEL ENHANCEMENT MODE ?쓀LTRA HIGH DENSITY??POWER MOS TRANSISTOR

■ TYPICAL RDS(on) = 0.016 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ HIGH CURRENT CAPABILITY ■ 175oC OPERATING TEMPERATURE ■ HIGH dV/dt CAPABILITY ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPEED SWITCHING ■ POWER MOTOR CONTROL ■ DC-DC & D

文件：65.59 Kbytes 页数：7 Pages

STMICROELECTRONICS

意法半导体

N-Channel 30-V (D-S) MOSFET

文件：984.48 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N - CHANNEL ENHANCEMENT MODE ”ULTRA HIGH DENSITY” POWER MOS TRANSISTOR

ST

意法半导体