STP08IE120F4资料datasheet下载库存现货-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
STP08IE120F4	文件：278.49 Kbytes Page：11 Pages	Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm Description The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current Cascode configuration ■ Low equi 文件：278.49 Kbytes 页数：11 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STP08IE120F4	文件：300 bytes Page：1 Pages	Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm	ST 意法半导体	ST
STP08IE120F4	文件：100 bytes Page：1 Pages	Package：TO-220-4 整包；包装：卷带（TR）类别：分立半导体产品晶体管 - 特殊用途描述：TRANS BIPO EMITTER SW TO-220FP-4	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
P08IE120F4	文件：278.49 Kbytes Page：11 Pages	Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm Description The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current Cascode configuration ■ Low equi 文件：278.49 Kbytes 页数：11 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多STP08IE120F4供应商更新时间2026-2-9 16:12:00