STP12IE90F4中文资料下载库存现货-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
STP12IE90F4	文件：274.39 Kbytes Page：11 Pages	Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm Description The STP12IE90F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current Cascode configuration ■ Low equiv 文件：274.39 Kbytes 页数：11 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STP12IE90F4	文件：300 bytes Page：1 Pages	Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm	ST 意法半导体	ST
STP12IE90F4	文件：100 bytes Page：1 Pages	Package：TO-220-4 整包；包装：卷带（TR）类别：分立半导体产品晶体管 - 特殊用途描述：TRANS BIPO EMITTER SW TO-220FP-4	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
P12IE90F4	文件：274.39 Kbytes Page：11 Pages	Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm Description The STP12IE90F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current Cascode configuration ■ Low equiv 文件：274.39 Kbytes 页数：11 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多STP12IE90F4供应商更新时间2026-2-1 16:12:00