STP12IE95F4规格书行情报价意法半导体-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
STP12IE95F4	文件：275.01 Kbytes Page：11 Pages	Emitter Switched Bipolar Transistor ESBT 950 V - 12A - 0.083 ohm Description The STP12IE95F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current Cascode configuration ■ Low equiv 文件：275.01 Kbytes 页数：11 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STP12IE95F4	文件：300 bytes Page：1 Pages	Emitter Switched Bipolar Transistor ESBT 950 V - 12A - 0.083 ohm	ST 意法半导体	ST
P12IE95F4	文件：275.01 Kbytes Page：11 Pages	Emitter Switched Bipolar Transistor ESBT 950 V - 12A - 0.083 ohm Description The STP12IE95F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current Cascode configuration ■ Low equiv 文件：275.01 Kbytes 页数：11 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
STP12NM50N	文件：0 bytes Page：0 Pages	TO-220F	ST 上传：深圳市恒星亚创科技有限公司	ST
STP15810	文件：0 bytes Page：0 Pages	TO220	ST 上传：深圳市纳艾斯科技有限公司	ST

更多STP12IE95F4供应商更新时间2026-2-1 16:01:00