isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.15Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.75 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.115 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ LOGIC LEVEL COMPATIBLE INPUT ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION AP

文件：196.4 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60-V (D-S), 175C MOSFET, Logic Level

文件：60.2 Kbytes 页数：4 Pages

VISHAYVishay Siliconix

威世威世科技公司

N-channel Enhanced mode SOP-8 MOSFET

文件：897.7 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF15N06 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current

文件：3.88825 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体