丝印：15N06TFYWCP；Package：TO-252；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF15N06 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current

文件：3.88825 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

60V N-Channel DTMOS

文件：661.28 Kbytes 页数：7 Pages

WUMC

紫光国微

N -CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR

DESCRIPTION The UTC 15N06 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)

文件：247.26 Kbytes 页数：6 Pages

UTC

友顺

Fast Switching

文件：67.34 Kbytes 页数：2 Pages

ISC

无锡固电

15A, 60V N-CHANNEL POWER MOSFET

文件：245.73 Kbytes 页数：6 Pages

UTC

友顺