isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 14A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.299Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-channel 600V - 0.270廓 - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

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STMICROELECTRONICS

意法半导体

N-channel 600 V - 0.27 廓 - 14 A - FDmesh??II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247

Description The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body d

文件：600.45 Kbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

文件：320.37 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.27 Ohm typ., 14 A FDmesh II Power MOSFET in TO-220 package

The FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly The worldwide best R\nDS(on)* area amongst the fast recovery diode devices\nLow input capacitance and gate charge\n100% avalanche tested\nExtremely high dv/dt and avalanche capabilities\nLow gate input resistance;

ST

意法半导体