isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.7mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.77 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 55 V, 2.9 miliohm, 120 A, TO-220

文件：648.97 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件：1.42537 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

N沟道55 V、2.9 mOhm典型值、120 A STripFET(TM) 功率MOSFET，TO-220封装

This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics' unique \\\"single feature size\\\" strip-based process, which has decreased the critical alignment steps, offering remarkable manufacturing reproducibility. The outcome is a transistor with extremely high pa • Logic level drive \n• 100% avalanche tested;

ST

意法半导体