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STP15NM60ND数据手册ST中文资料规格书
STP15NM60ND规格书详情
描述 Description
The FDmesh II series belongs to the second generation of MDmesh technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters.
特性 Features
The worldwide best R
DS(on)* area amongst the fast recovery diode devices
Low input capacitance and gate charge
100% avalanche tested
Extremely high dv/dt and avalanche capabilities
Low gate input resistance
技术参数
- 型号:
STP15NM60ND
- 功能描述:
MOSFET N-channel 600V, 14A FDMesh II
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
实库ST厡裝現貨 |
24+ |
TO220 |
12000 |
原装正品 假一罚十 可拆样 |
询价 | ||
ST/意法 |
24+ |
TO-220AB |
28800 |
只做原装,欢迎询价,量大价优 |
询价 | ||
ST |
24+ |
TO-220 |
10000 |
原装现货热卖 |
询价 | ||
ST/意法 |
22+ |
N |
28000 |
原装现货只有原装.假一罚十 |
询价 | ||
ST/意法 |
23+ |
NA |
25630 |
原装正品 |
询价 | ||
ST全系列 |
25+23+ |
TO-220 |
25761 |
绝对原装正品全新进口深圳现货 |
询价 | ||
ST/意法 |
21+ |
NA |
12820 |
只做原装,质量保证 |
询价 | ||
ST |
20+ |
TO-220 |
36900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
ST(意法半导体) |
24+ |
TO-220 |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
实库ST厡裝現貨 |
24+ |
TO220 |
5000 |
全新原装正品,现货销售 |
询价 |