isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 120A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 3.8mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.02 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 55V - 3.2m廓 - 120A - D2PAK/TO-220 STripFET??Power MOSFET

Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size™” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high pack

文件：335.69 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 55 V, 3.2 mOhm typ., 120 A STripFET(TM) Power MOSFET in TO-220 package

• Ultra low on-resistance• 100% avalanche tested;

ST

意法半导体

N-channel 55V - 3.2m廓 - 120A - D2PAK/TO-220 STripFET??Power MOSFET

Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size™” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high pack

文件：335.69 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体