isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 16A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.09Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.51 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

文件：337.12 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V(D-S) MOSFET

文件：1.09154 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.09Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.97 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

文件：337.12 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-channel 60 V, 0.07 Ohm typ., 16 A STripFET II Power MOSFET in TO-220 package

• TYPICAL RDS(on) = 0.07\n• LOW GATE CHARGE AT 100 °C• EXCEPTIONAL dv/dt CAPABILITY\n• LOW THRESHOLD DRIVE;

ST

意法半导体