isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.09Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.97 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET??II POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkab

文件：337.12 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.08廓 - 16A - TO-220/TO-220FP STripFET??II Power MOSFET

文件：325.46 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 60V - 0.07 ohm - 16A D2PAK STripFET??POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：312.94 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.07廓 - 16A - D2PAK STripFET??Power MOSFET

文件：406.06 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体