N-CHANNEL 60V - 0.07 ohm - 16A D2PAK STripFET??POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：312.94 Kbytes 页数：9 Pages

STMICROELECTRONICS

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N-channel 60V - 0.07廓 - 16A - D2PAK STripFET??Power MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：405.62 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.07廓 - 16A - D2PAK STripFET??Power MOSFET

文件：406.06 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-Channel 60 V (D-S) MOSFET

文件：1.32337 Mbytes 页数：9 Pages

VBSEMI

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N-channel 60V - 0.07ohm - 16A - D2PAK STripFET Power MOSFET

文件：405.62 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.07廓 - 16A - D2PAK STripFET??Power MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarka

文件：405.62 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.07廓 - 16A - D2PAK STripFET??Power MOSFET

文件：406.06 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件：1.3233 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N沟道60 V、0.07 Ohm典型值、16 A STripFET II功率MOSFET，D2PAK封装

This Power MOSFET is the latest development of STMicroelectronis unique \\\"Single Feature Size™\\\" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable man • Exceptional dv/dt capability \n• Logic level device \n• Low gate charge at 100°C \n• Low threshold drive;

ST

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