isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 13A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.08Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.68 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 60V - 0.06 ohm - 20A TO-220/TO-220FP STripFET POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique ” Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a rem

文件：104.15 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件：1.31336 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N - CHANNEL 60V - 0.06ohm - 20A D2PAK STripFET] POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark

文件：85.14 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 60V - 0.06ohm - 20A TO-263 STripFET] POWER MOSFET

DESCRIPTION This Power Mosfet is the latest development of STMicroelectronis unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remark

文件：84.31 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体