isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.07Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.52 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 60V - 0.06ohm - 20A TO-220/TO-220FP STripFET II POWER MOSFET

Description This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remar

文件：275.05 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.06 - 20A - TO-220/TO-220FP STripFET II Power MOSFET

文件：341.87 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-Channel 60 V (D-S) MOSFET

文件：1.31585 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

MOSFET N-CH 60V 20A TO-220

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.07Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：371.72 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 60V - 0.06 - 20A - TO-220/TO-220FP STripFET II Power MOSFET

文件：341.87 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 60V - 0.06廓 - 20A - D2PAK/TO-220/TO-220FP STripFET??II Power MOSFET

文件：395.82 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 60 V, 0.06 Ohm typ., 20 A STripFET(TM) II Power MOSFET in TO-220 package

• Avalanche rugged technology\n• 175˚C operating temperature\n• 100% avalanche tested• Application oriented characterization\n• High dv/dt capability;

ST

意法半导体