N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.10552 Mbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.230 Ohm, 12 A MDmesh V Power MOSFET in DPAK, DPAK

Description These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched a

文件：1.37238 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel Mosfet Transistor

文件：303.81 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道650 V、0.230 Ohm典型值、12 A MDmesh M5功率MOSFET，TO-220封装

These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched among silicon-ba • Worldwide best RDS(on) \n• Higher VDSSrating \n• High dv/dt capability \n• Excellent switching performance \n• Easy to drive \n• 100% avalanche tested;

ST

意法半导体