丝印：P150NF04；Package：TO-22；N-channel 40 V, 0.005 廓 typ., 80 A STripFET?줚I Power MOSFET in a TO-220 package

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STMICROELECTRONICS

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N-Channel MOSFET uses advanced trench technology

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DOINGTER

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N沟道40 V、0.005 Ohm、80 A STripFET(TM) II功率MOSFET，TO-220封装

This Power MOSFET has been developed using STMicroelectronics’ unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu • 100% avalanche tested \n• Standard level gate drive;

ST

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N-Channel 40 V (D-S) MOSFET

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VBSEMI

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N-channel 40 V - 0.005 廓 - 80 A - D2PAK STripFET?줚I Power MOSFET

Description This Power MOSFET is the latest development of STMicroelectronis unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

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STMICROELECTRONICS

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