isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 15A@ TC=25℃ ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.13Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：332.24 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 60V - 0.1ohm - 14A TO-220 STripFET??POWER MOSFET

DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique Single Feature Size™ strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark

文件：247.67 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET??II POWER MOSFET

Description This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and C

文件：464.34 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-channel 100V - 0.115廓 - 15A - D2PAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET

文件：516.75 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-Channel 100-V (D-S) MOSFET

文件：939.33 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

N-channel 100 V, 0.115 Ohm, 15 A STripFET II Power MOSFET in a TO-220 package

• Exceptional dv/dt capability\n• Application oriented characterization• 100% avalanche tested;

ST

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 10A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance； -RDS(on) = 0.13Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.32 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 100V - 0.115 ohm - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET??II POWER MOSFET

Description This MOSFET series realized with STMicroelectronics unique STripFET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and C

文件：464.34 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

N-channel 100V - 0.115廓 - 15A - D2PAK/TO-220/TO-220FP Low gate charge STripFET??II Power MOSFET

文件：516.75 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-Channel 100-V (D-S) MOSFET

文件：2.20602 Mbytes 页数：8 Pages

VBSEMI

微碧半导体