N-channel 600 V, 0.28 ohm typ., 11 A MDmesh II Power MOSFET in TO-220FP, I2PAK, TO-220, IPAK, TO-247 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitab

文件：989.75 Kbytes 页数：21 Pages

STMICROELECTRONICS

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Isc N-Channel MOSFET Transistor

文件：318.25 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK

Description These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. T

文件：1.55172 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel Mosfet Transistor

文件：327.49 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道600 V、0.28 Ohm典型值、11 A MDmesh(TM) II功率MOSFET，TO-220封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most d • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

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N-channel 600 V, 325 mOhm typ., 11 A FDmesh II Power MOSFET in a TO-220 package

This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology. Utilizing a new strip-layout vertical structure, this device features low on-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters. • Fast-recovery body diode \n• Low gate charge and input capacitance \n• Low on-resistance RDS(on) \n• 100% avalanche tested \n• High dv/dt ruggedness;

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意法半导体