P08IE120F4规格书应用电路批发采购-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
P08IE120F4	文件：278.49 Kbytes Page：11 Pages	Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm Description The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current Cascode configuration ■ Low equi 文件：278.49 Kbytes 页数：11 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS
P08IE120F4	文件：300 bytes Page：1 Pages	Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm	ST 意法半导体	ST
STP08IE120F4	文件：278.49 Kbytes Page：11 Pages	Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm Description The STP08IE120F4 is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based topologies. General features ■ High voltage / high current Cascode configuration ■ Low equi 文件：278.49 Kbytes 页数：11 Pages	STMICROELECTRONICS 意法半导体	STMICROELECTRONICS

更多P08IE120F4供应商更新时间2026-1-31 16:01:00