STP110N10F7

N沟道100 V、5.1 mOhm典型值、110 A STripFET F7功率MOSFET，TO-220封装; • 超低导通电阻 \n• 经过100％雪崩测试;

该器件使用ST专有的STripFET™技术的第七代设计规则，具有新的栅极结构。因而，功率MOSFET在不同封装中都能呈现最低的RDS(on)。\n\n

STP110N10F7

丝印：110N10F7；Package：TO-220；N-channel 100 V, 5.1 m廓 typ., 110 A, STripFET??VII DeepGATE?? Power MOSFETs in TO-220FP and TO-220 packages

STP110N10F7

N-Channel MOSFET uses advanced SGT technology

STP110N10F7

isc N-Channel MOSFET Transistor

110N10F7

Highavalancheruggedness

STF110N10F7

iscN-ChannelMOSFETTransistor

STF110N10F7

N-channel100V,5.1m廓typ.,110A,STripFET??VIIDeepGATE??PowerMOSFETsinTO-220FPandTO-220packages

STL110N10F7

Highavalancheruggedness

STLD110N10F7

N-channel100V,5mΩtyp.,107ASTripFET™F7PowerMOSFETinaPowerFLAT™5x6dualsidecoolingpackage

Features •AmongthelowestRDS(on)onthemarket •ExcellentFoM(figureofmerit) •LowCrss/CissratioforEMIimmunity •Highavalancheruggedness Applications Switchingapplications Description ThisN-channelPowerMOSFETutilizesSTripFET™F7technologywithan enhancedtrenchg