isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 9.0A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) -RDS(on) = 0.9Ω(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：373.13 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：P10NK80Z；Package：TO-220；N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：458.81 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：P10NK80Z；Package：TO-220；N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design

文件：444.1 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-channel 800V - 0.78廓 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET

文件：452.12 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design

文件：444.1 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：P10NK80ZFP；Package：TO-220FP；N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：458.81 Kbytes 页数：11 Pages

STMICROELECTRONICS

意法半导体

丝印：P10NK80ZFP；Package：TO-220FP；N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design

文件：444.1 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

N-Channel Super Junction MOSFET

FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 800V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.9Ω(Max)@VGS= 10V APPLICATIONS ·Switch Mode Power Supply(SMPS) ·Power Factor Correction(PFC) ·TV Power & LED lighting Power ·AC to DC Converters

文件：303.74 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 800V - 0.78廓 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET

文件：452.12 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 800V - 0.78廓 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET

文件：452.12 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体