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STP10NK80Z

N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablished strip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,special careistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP10NK80Z

N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH™technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP10NK80Z

N-channel 800V - 0.78廓 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP10NK80Z_V01

N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH™technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP10NK80ZFP

N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablished strip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,special careistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP10NK80ZFP

N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH™technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP10NK80ZFP

N-Channel Super Junction MOSFET

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.9Ω(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·PowerFactorCorrection(PFC) ·TVPower&LEDlightingPower ·ACtoDCConverters

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP10NK80Z_06

N-channel 800V - 0.78廓 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP10NK80ZFP

N-channel 800V - 0.78廓 - 9A - TO-220/FP-TO-247 Zener-protected superMESHTM MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

10NK80Z

N-channel800V,0.78Ω,9AZener-protectedSuperMESH™PowerMOSFETsinTO-220,TO-220FPandTO-247packages

Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH™technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

P10NK80

N-channel800V-0.78廓-9A-TO-220/FP-TO-247Zener-protectedsuperMESHTMMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

P10NK80Z

N-channel800V,0.78Ω,9AZener-protectedSuperMESH™PowerMOSFETsinTO-220,TO-220FPandTO-247packages

Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH™technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

P10NK80ZFP

N-channel800V,0.78Ω,9AZener-protectedSuperMESH™PowerMOSFETsinTO-220,TO-220FPandTO-247packages

Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH™technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW10NK80Z

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=9A@TC=25℃ ·DrainSourceVoltage-VDSS=800V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.9Ω(Max)@VGS=10V APPLICATIONS ·Highcurrent,highspeedswitching ·Switchmodepowersupplies ·DC-ACconvertersforwelding,UPSandMotordrive

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STW10NK80Z

N-channel800V,0.78Ω,9AZener-protectedSuperMESH™PowerMOSFETsinTO-220,TO-220FPandTO-247packages

Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH™technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW10NK80Z

N-CHANNEL800V-0.78ohm-9ATO-220/TO-220FP/TO-247Zener-ProtectedSuperMESH?줡owerMOSFET

Description TheSuperMESH™seriesisobtainedthroughanextremeoptimizationofST’swellestablished strip-basedPowerMESH™layout.Inadditiontopushingon-resistancesignificantlydown,special careistakentoensureaverygooddv/dtcapabilityforthemostdemandingapplications.

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW10NK80Z

N-channel800V-0.78廓-9A-TO-220/FP-TO-247Zener-protectedsuperMESHTMMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

W10NK80Z

N-channel800V,0.78Ω,9AZener-protectedSuperMESH™PowerMOSFETsinTO-220,TO-220FPandTO-247packages

Description ThesedevicesareN-channelZener-protected PowerMOSFETsdevelopedusing STMicroelectronics'SuperMESH™technology, achievedthroughoptimizationofST'swell establishedstrip-basedPowerMESH™layout.In additiontoasignificantreductioninonresistance,thisdeviceisdesign

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    STP10NK80Z

  • 功能描述:

    MOSFET N-Ch 800 Volt 9 Amp Zener SuperMESH

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
STMicroelectronics
23+
TO-220
30000
晶体管-分立半导体产品-原装正品
询价
STMICRO
2305+
原厂封装
8900
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
询价
ST
19+
TO220
50000
全新原装
询价
STM
21+
TO-220
5000
专营原装正品现货,当天发货,可开发票!
询价
ST/意法
21+
NA
77000
只做原装,假一罚十
询价
ST
1923+
TO220F
5000
全新原装公司现货
询价
ST
23+
TO220
6996
只做原装正品现货
询价
STM
21+
TO-220-3
5000
原装正品 有挂有货
询价
STM
21+/22+
4000
TO-220-3
询价
ST
22+
TO-220
3894
长源创新-只做原装---假一赔十
询价
更多STP10NK80Z供应商 更新时间2024-4-30 15:14:00