型号：STP10NK80Z；Package：TO-220；N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：458.81 Kbytes 页数：11 Pages

意法半导体

型号：STP10NK80Z；Package：TO-220；N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design

文件：444.1 Kbytes 页数：17 Pages

意法半导体

型号：STP10NK80ZFP；Package：TO-220FP；N-CHANNEL 800V - 0.78ohm - 9A TO-220/TO-220FP/TO-247 Zener-Protected SuperMESH?줡ower MOSFET

Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

文件：458.81 Kbytes 页数：11 Pages

意法半导体

型号：STP10NK80ZFP；Package：TO-220FP；N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design

文件：444.1 Kbytes 页数：17 Pages

意法半导体

型号：P10NK80Z；N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design

文件：444.1 Kbytes 页数：17 Pages

意法半导体

型号：P10NK80ZFP；N-channel 800 V, 0.78 Ω, 9 A Zener-protected SuperMESH™ Power MOSFETs in TO-220, TO-220FP and TO-247 packages

Description These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is design

文件：444.1 Kbytes 页数：17 Pages

意法半导体