N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA

文件：495.62 Kbytes 页数：17 Pages

STMICROELECTRONICS

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N-channel 30V - 0.014ohm - 45A TO-220 - TO-220FP - D2PAK STripFET II power MOSFET

文件：357.14 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650 V (D-S) MOSFET

文件：1.035089 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

isc N-Channel Mosfet Transistor

文件：318.84 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

DESCRIPTION The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. ■ TYPICAL RDS(on) = 0.40Ω ■ HIGH dv/dt AND AVALANCHE CA

文件：495.62 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel Mosfet Transistor

文件：309.16 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V, 0.38 Ohm typ., 11 A MDmesh Power MOSFET in TO-220 package

• 100% avalanche tested\n• Low input capacitance and gate charge\n• High dv/dt and avalanche capabilities• Tight process control and high manufacturing yields\n• Low gate input resistance;

ST

意法半导体