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STD11NM60N-1

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件:470.38 Kbytes 页数:17 Pages

STMICROELECTRONICS

意法半导体

STD11NM60N-1

N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件:641.21 Kbytes 页数:20 Pages

STMICROELECTRONICS

意法半导体

STD11NM60N-1

N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件:489.4 Kbytes 页数:18 Pages

STMICROELECTRONICS

意法半导体

STD11NM60ND

N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced on-resistance and fast switching wi

文件:530.46 Kbytes 页数:18 Pages

STMICROELECTRONICS

意法半导体

STD11NM65N

N-channel 650 V, 0.425 廓 typ., 11 A MDmesh?줚I Power MOSFET in DPAK, TO-220FP, I짼PAKFP and TO-220 packages

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit

文件:1.26375 Mbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

STD11NM65N

N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET

Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suit

文件:1.26375 Mbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

STD110N02R

Power MOSFET

文件:102.59 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

STD110N02RT4G

Power MOSFET

文件:102.59 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

STD110N8F6

Very low gate charge

文件:632.6 Kbytes 页数:16 Pages

STMICROELECTRONICS

意法半导体

STD110NH02L

N-channel 24V - 0.0044ohm - 80A - DPAK STripFET TM III Power MOSFET

文件:463.1 Kbytes 页数:15 Pages

STMICROELECTRONICS

意法半导体

技术参数

  • Package:

    DPAK

  • Grade:

    Industrial

  • VDSS(V):

    650

  • RDS(on)_max(@ VGS=10V)(Ω):

    0.68

  • Drain Current (Dc)_max(A):

    7

  • PTOT_max(W):

    85

  • Qg_typ(nC):

    12.5

供应商型号品牌批号封装库存备注价格
ST
23+
TO252
6996
只做原装正品现货
询价
STM
20+
5000
TO-252-3 (DPAK)
询价
ST/意法半导体
22+
TO-252-3
6007
原装正品现货 可开增值税发票
询价
ST
24+
TO-252
40000
只做原装 有挂有货 假一赔十
询价
ST(意法半导体)
24+
TO-252
9555
支持大陆交货,美金交易。原装现货库存。
询价
STMicroelectronics
21+
DPAK
2500
100%进口原装!长期供应!绝对优势价格(诚信经营)!
询价
ST(意法半导体)
2447
TO-252-3(DPAK)
105000
2500个/圆盘一级代理专营品牌!原装正品,优势现货,
询价
STM
25+
TO-252
1675
就找我吧!--邀您体验愉快问购元件!
询价
ST(意法)
23+
NA
20094
正纳10年以上分销经验原装进口正品做服务做口碑有支持
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
更多STD11供应商 更新时间2025-12-1 14:24:00