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STD11NM60N-1

N-channel 600V-0.37ohm-10A-TO-220-TO-220FP- IPAK-DPAK Second generation MDmesh Power MOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD11NM60N-1

N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD11NM60N-1

N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

Description ThisseriesofdevicesisdesignedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD11NM60ND

N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK

Description ThedeviceisanN-channelFDmesh™IIPowerMOSFETthatbelongstothesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompanysstriplayoutandassociatesalladvantagesofreducedon-resistanceandfastswitchingwi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD11NM65N

N-channel 650 V, 0.425 廓 typ., 11 A MDmesh?줚I Power MOSFET in DPAK, TO-220FP, I짼PAKFP and TO-220 packages

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD11NM65N

N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET

Description ThesedevicesareN-channelPowerMOSFETsdevelopedusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesaverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuit

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD110N02R

Power MOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

STD110N02RT4G

Power MOSFET

ONSEMION Semiconductor

安森美半导体安森美半导体公司

STD110N8F6

Very low gate charge

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD110NH02L

N-channel 24V - 0.0044ohm - 80A - DPAK STripFET TM III Power MOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    STD11

  • 功能描述:

    MOSFET N-Ch 24 Volt 80 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST
24+
TO252DPAK
8866
询价
ST
2015+
TO252D
12500
全新原装,现货库存长期供应
询价
ST
1822+
TO-252
9852
只做原装正品假一赔十为客户做到零风险!!
询价
ST
24+
TO-252
90000
一级代理商进口原装现货、假一罚十价格合理
询价
ST
18+
TO-252
41200
原装正品,现货特价
询价
APTMICROSEMI
23+
TO-220K
69820
终端可以免费供样,支持BOM配单!
询价
ST
1709+
TO-252/D-
32500
普通
询价
ST
22+
TO252DPAK
6000
十年配单,只做原装
询价
ST/意法
22+
SOT252
100000
代理渠道/只做原装/可含税
询价
ST
2022+
TO-252
48000
只做原装,原装,假一罚十
询价
更多STD11供应商 更新时间2025-5-1 15:30:00