丝印：DPAK；Package：TO-252；isc N-Channel MOSFET Transistor

文件：323.45 Kbytes 页数：2 Pages

ISC

无锡固电

N沟道80 V、0.0056 Ohm典型值、110 A STripFET F6功率MOSFET，DPAK封装

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on)in all packages. • Very low on-resistance \n• Very low gate charge \n• High avalanche ruggedness \n• Low gate drive power loss;

ST

意法半导体

N-CHANNEL 24V - 0.0044 ohm - 80A DPAK STripFET™ III POWER MOSFET

ST

意法半导体

晶闸管-二极管模块

Sirectifier

矽莱克电子