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STB11NM60N

N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件:641.21 Kbytes 页数:20 Pages

STMICROELECTRONICS

意法半导体

STB11NM60N

丝印:D2PAK;Package:TO-263;isc N-Channel Mosfet Transistor

文件:312.51 Kbytes 页数:2 Pages

ISC

无锡固电

STB11NM60N

N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET

文件:623.95 Kbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

STB11NM60N-1

N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件:641.21 Kbytes 页数:20 Pages

STMICROELECTRONICS

意法半导体

STB11NM60N-1

N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件:489.4 Kbytes 页数:18 Pages

STMICROELECTRONICS

意法半导体

STB11NM60N-1

N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET

文件:623.95 Kbytes 页数:21 Pages

STMICROELECTRONICS

意法半导体

STB11NM60N-1

丝印:I2PAK;Package:TO-262;isc N-Channel Mosfet Transistor

文件:357.17 Kbytes 页数:2 Pages

ISC

无锡固电

STB11NM60N-1

MOSFET N-CH 600V 10A I2PAK

ST

意法半导体

详细参数

  • 型号:

    STB11NM60N

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    N-channel 600 V - 0.37 ヘ - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh⑩ Power MOSFET

供应商型号品牌批号封装库存备注价格
ST全系列
25+23+
I2PAK
26772
绝对原装正品全新进口深圳现货
询价
ST
23+
TO-262
50000
全新原装正品现货,支持订货
询价
ST
08+
TO-262
20
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
ST
23+
TO-262
2520
原厂原装正品
询价
SST
原厂封装
9800
原装进口公司现货假一赔百
询价
ST
26+
TO-247
86720
代理授权原装正品价格最实惠 本公司承诺假一赔百
询价
ST
17+
I2PAK
6200
询价
ST
20+
TO-262
38560
原装优势主营型号-可开原型号增税票
询价
ST
25+
TO220
50
现货
询价
22+
NA
3000
加我QQ或微信咨询更多详细信息,
询价
更多STB11NM60N供应商 更新时间2026-1-31 16:50:00