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STB11NM60N-1中文资料PDF规格书
STB11NM60N-1规格书详情
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
Features
■ 100 avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
产品属性
- 型号:
STB11NM60N-1
- 功能描述:
MOSFET N-Channel 650V Pwr Mosfet
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
23+ |
NA/ |
3300 |
原厂直销,现货供应,账期支持! |
询价 | ||
ST |
2016+ |
TO220 |
6528 |
只做进口原装现货!假一赔十! |
询价 | ||
ST |
08+ |
TO-262 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
ST |
21+ |
TO220 |
20000 |
原厂订货价格优势,可开13%的增值税票 |
询价 | ||
ST |
TO220 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST/意法 |
TO263 |
265209 |
假一罚十,原包原标签,常备现货 |
询价 | |||
ST专家 |
2022 |
D2PAK |
5880 |
原厂原装正品,价格超越代理 |
询价 | ||
ST-意法半导体 |
24+25+/26+27+ |
TO-262-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
ST |
17+ |
I2PAK |
6200 |
询价 | |||
ST |
23+ |
TO-263 |
9896 |
询价 |