N-channel 600 V, 0.37 廓, 10 A MDmesh??II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件：641.21 Kbytes 页数：20 Pages

STMICROELECTRONICS

意法半导体

N-channel 600V - 0.37廓 - 10A - TO-220/FP- I/I2PAK - DPAK second generation MDmesh??Power MOSFET

Description This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mo

文件：489.4 Kbytes 页数：18 Pages

STMICROELECTRONICS

意法半导体

丝印：I2PAK；Package：TO-262；isc N-Channel Mosfet Transistor

文件：357.17 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 600 V - 0.37 廓 - 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh??Power MOSFET

文件：623.95 Kbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

MOSFET N-CH 600V 10A I2PAK

ST

意法半导体