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STB100NH02L

N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET

Description TheSTB100NH02LutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationswherehighefficiencyistobeachieved. Generalfeatures ■RDS(ON)*Qgindustry’sbenchmark ■Conductionlosses

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STB100NH02LT4

N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET

Description TheSTB100NH02LutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationswherehighefficiencyistobeachieved. Generalfeatures ■RDS(ON)*Qgindustry’sbenchmark ■Conductionlosses

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

B100NH02L

N-CHANNEL24V-0.0052ohm-60AD2PAKSTripFETTMIIIPOWERMOSFET

Description TheSTB100NH02LutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationswherehighefficiencyistobeachieved. Generalfeatures ■RDS(ON)*Qgindustry’sbenchmark ■Conductionlosses

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

D100NH02L

N-channel24V-0.0042ohm-60A-DPAK-IPAKSTripFETTMIIPowerMOSFET

Description ThisdeviceutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationwherehighefficiencyistobeachieved. Generalfeatures ■RDS(on)*Qgindustry’sbenchmark ■Conductionlossesredu

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD100NH02L

N-channel24V-0.0042ohm-60A-DPAK-IPAKSTripFETTMIIPowerMOSFET

Description ThisdeviceutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationwherehighefficiencyistobeachieved. Generalfeatures ■RDS(on)*Qgindustry’sbenchmark ■Conductionlossesredu

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STD100NH02L

N-channel24V-0.0042-60A-DPAK-IPAKSTripFETIIPowerMOSFET

Description ThisdeviceutilizesthelatestadvanceddesignrulesofST’sproprietarySTripFET™technology.ThisissuitablefotthemostdemandingDC-DCconverterapplicationwherehighefficiencyistobeachieved. Generalfeatures ■RDS(on)*Qgindustry’sbenchmark ■Conductionlossesredu

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

详细参数

  • 型号:

    STB100NH02L

  • 功能描述:

    MOSFET N-Ch 24 Volt 60 Amp

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
ST
24+
TO-263
90000
一级代理商进口原装现货、假一罚十价格合理
询价
RENESAS/瑞萨
23+
LFPAK
69820
终端可以免费供样,支持BOM配单!
询价
ST
1709+
TO-263/D2-PAK
32500
普通
询价
ST/意法
2022+
D2PAK
12888
原厂代理 终端免费提供样品
询价
ST
2022+
D2PAK
48000
只做原装,原装,假一罚十
询价
ST/意法
22+
D2PAK
98651
询价
ST
25+
D2PAK
37650
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
ST
21+
to263
23480
询价
ST
17+
TO-263
6200
询价
ST
12+
TO-263
15000
全新原装,绝对正品,公司现货供应。
询价
更多STB100NH02L供应商 更新时间2025-5-23 16:17:00