STB1132

Marking：A1**；Package：SOT-89；PNP Silicon Transistor

Description •Mediumpoweramplifier Features •PC(Collectordissipation)=2W(Ceramicsubstateof40×40×0.8mmused) •Lowcollectorsaturationvoltage:VCE(sat)=-0.2V(Typ.) •ComplementarypairwithSTD1664

STB1132

PNP Silicon Transistor

Description •Mediumpoweramplifier Features •PC(Collectorpowerdissipation) =1W(Ceramicsubstateof250㎟×0.8tused) •Lowcollectorsaturationvoltage:VCE(sat)=-0.2V(Typ.) •ComplementarypairwithSTD1664

STB1132

PNP Silicon Transistor

TA1132A

SAWFilter881.5MHz

TB1132A

47.25MHz6.2MHzBW13.8x4.6mmPlasticDIPSAWIFFilter

TSB1132

LowVcesatPNPTransistor

TSB1132

LowFrequencyPNPTransistor

Features ●LowVCE(SAT)-0.15@IC/IB=--.5A/-50mA(Typ.) ●ExcellentDCcurrentgaincharacteristics Structure ●EpitaxialPlanarType ●PNPSiliconTransistor

TSB1132CY

LowFrequencyPNPTransistor

Features ●LowVCE(SAT)-0.15@IC/IB=--.5A/-50mA(Typ.) ●ExcellentDCcurrentgaincharacteristics Structure ●EpitaxialPlanarType ●PNPSiliconTransistor

TSB1132CYRM

LowVcesatPNPTransistor

TZ1132A

SMD6.0x3.527MHzCrystalUnit

Features: SurfaceMountSeamWeldPackage ExcellentReliabilityPerformance GoodFrequencyPerturbationandStabilityovertemperature DescriptionandApplications: Surfacemount6.0mmx3.5mmcrystalunitforuseinwirelesstelecommunicationsdevices.