SPD04N60S5

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

SPD04N80C3

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

SPD04N80C3

N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

SPD-060

60W, Single Output Adapter

[SUNPOWERTECHNOLOGYCORP.] Features: ＊UniversalACinput88~264VAC ＊Lowripplenoise ＊Overload,overvoltage&shortcircuitprotection ＊ACinletIEC320C14 ＊Singleoutputmodelsnonminloadrequirement ＊10050℃burn-intest ＊UL,cUL,TUV,CB,CEstandard ＊1yearswa

SPD06N60C3

CoolMOS Power Transistor

Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Highpeakcurrentcapability •Ultraloweffectivecapacitances •Extremedv/dtrated •Improvedtransconductance •Pb-freeleadplating;RoHScompliant availableinHalogenfreem

SPD06N60C3

N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.75Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

SPD06N80C3

N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.9Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

SPD06N80C3

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO252 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated

SPD07N20

SIPMOS Power Transistor

Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated

SPD07N20G

N-Channel MOSFET Transistor

•DESCRITION •Idealforhigh-frequencyswitchingandsynchronousrectification •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation