CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances • Extreme dv/dt rated • Improved transconductance • Pb-free lead plating; RoHS compliant available in Halogen free m

文件：411.35 Kbytes 页数：11 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤0.75Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.42 Kbytes 页数：2 Pages

ISC

无锡固电

Ultra low gate charge

文件：401.49 Kbytes 页数：11 Pages

Infineon

英飞凌

CoolMOSTM Power Transistor

文件：642.41 Kbytes 页数：11 Pages

Infineon

英飞凌

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7\n 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌

CoolMOSTM Power Transistor

文件：642.41 Kbytes 页数：11 Pages

Infineon

英飞凌

Ultra low gate charge

文件：401.49 Kbytes 页数：11 Pages

Infineon

英飞凌