N-Channel MOSFET Transistor

• DESCRITION • Ideal for high-frequency switching and synchronous rectification • FEATURES • Static drain-source on-resistance: RDS(on)≤0.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.6 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 200 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：987.17 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

SIPMOS횘 Power Transistor Features N channel Enhancement mode Avalanche rated

文件：830.68 Kbytes 页数：10 Pages

Infineon

英飞凌

SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated

文件：120.09 Kbytes 页数：8 Pages

Infineon

英飞凌

isc N-Channel MOSFET Transistor

• FEATURES • With TO-251(IPAK) packaging • High speed switching • Easy to use • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Power supply • DC-DC converters • Motor control • Switching applications

文件：246.63 Kbytes 页数：2 Pages

ISC

无锡固电

SIPMOS횘 Power Transistor Features N channel Enhancement mode Avalanche rated

文件：830.68 Kbytes 页数：10 Pages

Infineon

英飞凌