C to Ku Band Mixer, Detector, Modulator Applications

Features • Very small-sized ceramic package • Less parasitic components, conversion loss • Many types : 5 single types, 10 integrated types

文件：57.78 Kbytes 页数：2 Pages

SANYO

三洋

Over Voltage & Under Voltage Cut-Off With Surge Protection Device

OVCD Features • Extends The Life Of Your Fixture By Eliminating Temporary Over/Under Voltages that Can Harm Sensitive Electronic Components • Over 6,000 Operations Per Product Lifetime • Safe Restore™ -30 Second Delay on Power-Up -Instant Drop on Over/Under Voltage Condition -30 Second Del

文件：234.05 Kbytes 页数：1 Pages

ABLEPOWERPRODUCTS

20 Amp 50-400 Volt 120 nsec FAST RECOVERY RECTIFIER

Features: • Fast Recovery: 120 nsec maximum • Low Reverse Leakage Current • Single Chip Construction • PIV to 400V • Hermetically Sealed • High Surge Rating • Low Thermal Resistance • Higher Voltage Devices Available–Contact Factory • For Reverse Polarity Add Suffix “R” • Replacement for

文件：75.77 Kbytes 页数：2 Pages

SSDI

Compact, High-Performance String Pot Dual Ouput to 50

文件：939.34 Kbytes 页数：4 Pages

TEC

泰科电子

丝印：SPD；Package：SOT-23F；MOSFETs Silicon P-Channel MOS

文件：379.29 Kbytes 页数：9 Pages

TOSHIBA

东芝

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

文件：279.9 Kbytes 页数：10 Pages

Infineon

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

文件：910.3 Kbytes 页数：11 Pages

Infineon

英飞凌

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08866 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.07867 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.21 Kbytes 页数：2 Pages

ISC

无锡固电