Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：267.56 Kbytes 页数：11 Pages

Infineon

英飞凌

SIPMO Power Transistor

SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated

文件：86.47 Kbytes 页数：9 Pages

SIEMENS

西门子

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08852 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.01 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

文件：294.92 Kbytes 页数：12 Pages

Infineon

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target app

文件：251.9 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.18 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • FEATURES • Static drain-source on-resistance: RDS(on)≤2.7Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.49 Kbytes 页数：2 Pages

ISC

无锡固电

CoolMOS Power Transistor

Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

文件：433.48 Kbytes 页数：11 Pages

Infineon

英飞凌

Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant; available Halogen free mold compound a) • Qualified according

文件：262.3 Kbytes 页数：11 Pages

Infineon

英飞凌