Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：267.56 Kbytes 页数：11 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.21 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.07867 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Cool MOS Power Transistor

文件：635.61 Kbytes 页数：11 Pages

Infineon

英飞凌

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

Replacement for 500V CoolMOS™ C3 is CoolMOS™ P7. \n 500V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌

Cool MOS Power Transistor

文件：635.61 Kbytes 页数：11 Pages

Infineon

英飞凌