| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
N-Channel MOSFET Transistor •DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Cool MOS Power Transistor CoolMOS™PowerTransistor Features •Newrevolutioanaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •Pb-freeleadplaing;RoHScompliant •QualifiedaccordingtoJEDECfortar | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-Channel MOSFET Transistor •DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel MOSFET Transistor •DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvednoiseimmunity | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Cool MOS Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-Channel MOSFET Transistor •DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.95Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
详细参数
- 型号：
SPD
- 制造商：
SANYO
- 制造商全称：
Sanyo Semicon Device
- 功能描述：
C to Ku Band Mixer, Detector, Modulator Applications
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
23+ |
TO-220 |
69820 |
终端可以免费供样,支持BOM配单! |
询价 | ||
GP |
24+ |
SOP |
6868 |
原装现货,可开13%税票 |
询价 | ||
INFINEON |
TO-252 |
6877 |
正品原装--自家现货-实单可谈 |
询价 | |||
INFINEON |
1520CN |
TO-252 |
7500 |
原厂直销 |
询价 | ||
INFINEON |
05+ |
原厂原装 |
15374 |
只做全新原装真实现货供应 |
询价 | ||
凌阳 |
24+ |
DIE邦定/500 |
6232 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | ||
SUNPLUS |
24+ |
QFP |
5000 |
只做原装公司现货 |
询价 | ||
Infineon |
23+ |
NA |
10658 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
询价 | ||
INFINEON |
23+ |
TO-220 |
20000 |
原装正品,假一罚十 |
询价 | ||
ST |
23+ |
TO-252 |
8795 |
询价 |
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