Cool MOS Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：260.399 Kbytes 页数：11 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤0.95Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.63 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS Power Transistor

文件：775.24 Kbytes 页数：11 Pages

Infineon

英飞凌

Cool MOS Power Transistor

文件：752.66 Kbytes 页数：11 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for 500V CoolMOS™ C3 is CoolMOS™ P7. \n 500V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌

Cool MOS Power Transistor

文件：775.24 Kbytes 页数：11 Pages

Infineon

英飞凌

Cool MOS Power Transistor

文件：752.66 Kbytes 页数：11 Pages

Infineon

英飞凌

包装：卷带（TR） 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：MOSFET N-CH 560V 4.5A DPAK

Infineon

英飞凌