Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

文件：268.26 Kbytes 页数：11 Pages

Infineon

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target applications

文件：895.21 Kbytes 页数：12 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

文件：335.62 Kbytes 页数：2 Pages

ISC

无锡固电

Power MOSFET

文件：1.07853 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

500V-900V CoolMOS™ N-Channel Power MOSFET

·Innovative high voltage technology\n ·Worldwide best R DS(on) in TO-251 and TO-252\n ·Ultra low gate charge\n ·Periodic avalanche rated\n ·Extreme dv/dt rated\n ·Ultra low effective capacitances\n ·Improved transconductance;

Infineon

英飞凌