SPD07N20G

N-Channel 200 V (D-S) MOSFET

FEATURES •TrenchFET®PowerMOSFET •175°CJunctionTemperature •PWMOptimized •100RgTested •ComplianttoRoHSDirective2002/95/EC APPLICATIONS •PrimarySideSwitch

SPD07N60C2

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO-251andTO-252 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvednoiseimmunity

SPD07N60C3

Cool MOS Power Transistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO-251andTO-252 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •Pb-freeleadplating;Rohscom

SPD07N60C3

N-Channel MOSFET Transistor

•DESCRITION •Highpeakcurrentcapability •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.6Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

SPD07N60S5

Cool MOS??Power Transistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO-251andTO-252 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHS

SPD0801

1 AMP 80-100 VOLTS SCHOTTKY RECTIFIER

FEATURES: ■PIVto100Volts ■ExtremelyLowForwardVoltageDrop ■LowReverseLeakageCurrent ■HighSurgeCapacity ■HighVoltageReplacementfor: ■1N5817-1N5819Series ■Surfacemountversionsavailable ■TX,TXV,andSpaceLevelScreeningAvailable

SPD0802

2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER

Features: •PIVto100Volts •ExtremelyLowForwardVoltageDrop •LowReverseLeakageCurrent •HighSurgeCapacity •HV/Replacementfor1N5817-1N5819Series •HermeticallySealed •TX,TXV,andSpaceLevelScreeningAvailable2/ •CategoryIIImetallurgicalbondperMILPRF19500appen

SPD0802SMS

2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER

Features: •PIVto100Volts •ExtremelyLowForwardVoltageDrop •LowReverseLeakageCurrent •HighSurgeCapacity •HV/Replacementfor1N5817-1N5819Series •HermeticallySealed •TX,TXV,andSpaceLevelScreeningAvailable2/ •CategoryIIImetallurgicalbondperMILPRF19500appen

SPD08N05L

SIPMOS-R POWER TRANSISTOR

Features •Nchannel •Enhancementmode •Avalancherated •LogicLevel •dv/dtrated •175˚Coperatingtemperature

SPD08N10

SIPMOS Power Transistor

Features •Nchannel •Enhancementmode •Avalancherated •dv/dtrated