N-Channel MOSFET Transistor

• DESCRITION • Ideal for high-frequency switching and synchronous rectification • FEATURES • Static drain-source on-resistance: RDS(on)≤0.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.6 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 200 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：987.17 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved noise immunity

文件：139.6 Kbytes 页数：11 Pages

Infineon

英飞凌

Cool MOS Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; Rohs com

文件：287.66 Kbytes 页数：12 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • High peak current capability • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤0.6Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.64 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS??Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO-251 and TO-252 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS

文件：262.82 Kbytes 页数：11 Pages

Infineon

英飞凌

1 AMP 80-100 VOLTS SCHOTTKY RECTIFIER

FEATURES: ■ PIV to 100 Volts ■ Extremely Low Forward Voltage Drop ■ Low Reverse Leakage Current ■ High Surge Capacity ■ High Voltage Replacement for: ■ 1N5817 - 1N5819 Series ■ Surface mount versions available ■ TX, TXV, and Space Level Screening Available

文件：173.55 Kbytes 页数：2 Pages

SSDI

2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER

Features: • PIV to 100 Volts • Extremely Low Forward Voltage Drop • Low Reverse Leakage Current • High Surge Capacity • HV/Replacement for 1N5817 - 1N5819 Series • Hermetically Sealed • TX, TXV, and Space Level Screening Available2/ • Category III metallurgical bond per MIL PRF 19500 appen

文件：30.22 Kbytes 页数：2 Pages

SSDI

2 AMP 80 - 100 VOLTS SCHOTTKY RECTIFIER

Features: • PIV to 100 Volts • Extremely Low Forward Voltage Drop • Low Reverse Leakage Current • High Surge Capacity • HV/Replacement for 1N5817 - 1N5819 Series • Hermetically Sealed • TX, TXV, and Space Level Screening Available2/ • Category III metallurgical bond per MIL PRF 19500 appen

文件：30.22 Kbytes 页数：2 Pages

SSDI

SIPMOS-R POWER TRANSISTOR

Features • N channel • Enhancement mode • Avalanche rated • Logic Level • dv/dt rated • 175˚C operating temperature

文件：125.15 Kbytes 页数：8 Pages

Infineon

英飞凌