Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：253.64 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤1.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.44 Kbytes 页数：2 Pages

ISC

无锡固电

500V-900V CoolMOS™ N-Channel Power MOSFET

·Innovative high voltage technology\n ·Worldwide best R DS(on) in TO-251 and TO-252\n ·Ultra low gate charge\n ·Periodic avalanche rated\n ·Extreme dv/dt rated\n ·Ultra low effective capacitances\n ·Improved transconductance;

Infineon

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Qualified according to JEDEC0) for target applications

文件：228.5 Kbytes 页数：9 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate chargeExtreme dv/dt rated

文件：4.70297 Mbytes 页数：9 Pages

Infineon

英飞凌

Cool MOS??Power Transistor

文件：251.72 Kbytes 页数：10 Pages

Infineon

英飞凌