SPP03N60S5

N-Channel MOSFET Transistor

•DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perf

SPP03N60S5

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

SPP03N60S5

Cool MOS??Power Transistor

SPP03N60S5

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

SPP03N60S5_03

Cool MOS??Power Transistor

SPP03N60S5_09

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

03N60S5

N-Channel650V(D-S)PowerMOSFET

03N60S5

N-Channel650V(D-S)MOSFET

ISPD03N60S5

N-ChannelMOSFETTransistor

•DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤1.4Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISPP03N60S5

N-ChannelMOSFETTransistor

•DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤1.4Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice perf