Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance

文件：308.41 Kbytes 页数：10 Pages

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N-Channel MOSFET Transistor

• DESCRIPTION • Ultra low gate charge • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on) ≤1.4Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device perf

文件：338.32 Kbytes 页数：2 Pages

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无锡固电

Cool MOS??Power Transistor

文件：251.72 Kbytes 页数：10 Pages

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Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：362.25 Kbytes 页数：10 Pages

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500V-900V CoolMOS™ N-Channel Power MOSFET

• Innovative high voltage technology\n• Worldwide best R DS(on) in TO-251 and TO-252\n• Ultra low gate charge\n• Periodic avalanche rated\n• Extreme dv/dt rated\n• Ultra low effective capacitances\n• Improved transconductance\n\n优势:;

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英飞凌

Cool MOS??Power Transistor

文件：251.72 Kbytes 页数：10 Pages

Infineon

英飞凌

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

文件：362.25 Kbytes 页数：10 Pages

Infineon

英飞凌