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SPD02N60

SIPMO Power Transistor

SIPMOS®PowerTransistor •N-Channel •Enhancementmode •Avalancherated

SIEMENSSiemens Semiconductor Group

西门子德国西门子股份公司

SPD02N60C3

Cool MOS Power Transistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPD02N60C3

N-Channel MOSFET Transistor

•DESCRITION •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPD02N60C3

N-Channel 650 V (D-S) MOSFET

FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

SPD02N60S5

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapp

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPD02N60S5

N-Channel MOSFET Transistor

•DESCRITION •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPD02N60C3

Cool MOS Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPD02N60C3

Cool MOS Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPD02N60C3_05

Cool MOS Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPD02N60C3_08

Cool MOS Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

详细参数

  • 型号:

    SPD02N60

  • 制造商:

    INFINEON

  • 制造商全称:

    Infineon Technologies AG

  • 功能描述:

    SIPMO Power Transistor

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
24+
5000
只做原厂渠道 可追溯货源
询价
infineon
12+
TO-252(DPAK)
15000
全新原装,绝对正品,公司现货供应。
询价
INFINEON
24+
TO-252
200000
询价
INFINE0N
23+
TO-252
11846
一级代理商现货批发,原装正品,假一罚十
询价
INFINEON
24+
TO-252
90000
一级代理商进口原装现货、假一罚十价格合理
询价
INFINEON
20+
TO-252
36900
原装优势主营型号-可开原型号增税票
询价
MAGNACHIP/美格纳
23+
SOP-8
69820
终端可以免费供样,支持BOM配单!
询价
INFINEON/英飞凌
23+
TO-252D-PAK
24190
原装正品代理渠道价格优势
询价
INFINEON
08+
5000
普通
询价
INFINEON/英飞凌
21+
TO-252D-PAK
30000
优势供应 实单必成 可13点增值税
询价
更多SPD02N60供应商 更新时间2025-5-6 16:36:00