SIPMO Power Transistor

SIPMOS® Power Transistor • N-Channel • Enhancement mode • Avalanche rated

文件：86.47 Kbytes 页数：9 Pages

SIEMENS

西门子

SIPMO Power Transistor

Infineon

英飞凌

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08852 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.01 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

文件：294.92 Kbytes 页数：12 Pages

Infineon

英飞凌

Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0) for target app

文件：251.9 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • Improved transconductance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.18 Kbytes 页数：2 Pages

ISC

无锡固电

Cool MOS Power Transistor

文件：1.01922 Mbytes 页数：13 Pages

Infineon

英飞凌

Cool MOS Power Transistor

文件：1.22437 Mbytes 页数：13 Pages

Infineon

英飞凌

Cool MOS Power Transistor

文件：1.22437 Mbytes 页数：13 Pages

Infineon

英飞凌