Cool MOS Power Transistor

Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances

文件：294.92 Kbytes 页数：12 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Ultra low effective capacitance • FEATURES • Static drain-source on-resistance: RDS(on)≤3Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：336.01 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08852 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

Cool MOS Power Transistor

文件：1.22437 Mbytes 页数：13 Pages

Infineon

英飞凌

Cool MOS Power Transistor

文件：1.01922 Mbytes 页数：13 Pages

Infineon

英飞凌

500V-900V CoolMOS™ N-Channel Power MOSFET

Replacement for 600V CoolMOS™ C3 is 600V CoolMOS™ C6/E6 >> Click & go to 600V CoolMOS™ C6/E6 \n600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the \"working horse\" of the portfolio. ·Low specific on-state resistance\n ·(R on*A)\n ·Very low energy storage in output capacitance (E oss) @400V\n ·Low gate charge (Q g)\n ·Fieldproven CoolMOS™ quality\n ·CoolMOS™ technology has been manufactured by Infineon since 1998;

Infineon

英飞凌

Cool MOS Power Transistor

文件：1.22437 Mbytes 页数：13 Pages

Infineon

英飞凌

Cool MOS Power Transistor

文件：1.01922 Mbytes 页数：13 Pages

Infineon

英飞凌