SIPMOS Power Transistor

Features • N channel • Enhancement mode • Avalanche rated • dv/dt rated

文件：120.09 Kbytes 页数：8 Pages

Infineon

英飞凌

SIPMOS횘 Power Transistor Features N channel Enhancement mode Avalanche rated

文件：830.68 Kbytes 页数：10 Pages

Infineon

英飞凌

SIPMOS Power Transistor

Infineon

英飞凌

N-Channel MOSFET Transistor

• DESCRITION • Ideal for high-frequency switching and synchronous rectification • FEATURES • Static drain-source on-resistance: RDS(on)≤0.4Ω • Enhancement mode: • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

文件：335.6 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 200 V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • PWM Optimized • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Primary Side Switch

文件：987.17 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

SIPMOS횘 Power Transistor Features N channel Enhancement mode Avalanche rated

文件：830.68 Kbytes 页数：10 Pages

Infineon

英飞凌

SIPMOS횘 Power Transistor Features N channel Enhancement mode Avalanche rated

文件：830.68 Kbytes 页数：10 Pages

Infineon

英飞凌

20V-300V N-Channel Power MOSFET

Infineon's 200V OptiMOS™ products are performance leading benchmark technologies, perfectly suited for synchronous rectification in 48V systems,DC-DC converters, uninterruptable power supplies (UPS) and inverters for DC motor drives. • Industry’s lowest R DS(on)\n• Lowest Q g and Q gd\n• World’s lowest FOM RoHS compliant − halogen free MSL 1 rated\n\n优势:\n• Highest efficiency\n• Highest power density\n• Lowest board space consumption\n• Minimal device paralleling required\n• System cost improvement\n• Enviromentally friendly\n• ;

Infineon

英飞凌